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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-126 Plastic-Encapsulate Transistors
3DD13002
TRANSISTORNPN (c)
TO 126
FEATURES Power dissipation PCM : 1.25 W Tamb=25ae(c) Collector current ICM : 1 A Collector-base voltage V(BR)CBO : 600 V Operating and storage junction temperature range T J T stg: -55aeto +150ae ELECTRICAL CHARACTERISTICS Tamb=25ae
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(c) 1 DC current gain hFE(c) 2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Fall time Storage time VCE(sat) VBE(sat) fT tf ts VCE= 10 V, IC= 200 m A IC=200m A, IB= 40 m A IC=200mA, IB= 40 m A VCE=10V, f =1MHz IC=1A, Ic=100mA
1.BASE 2.COLLECTOR 3.EMITTER
123
unless
Test
otherwise
specified(c)
TYP MAX UNIT V V V 100 100 5 9 40 0.8 1.1 5 0.5 2.5 V V MHz s s A A
conditions
MIN 600 400 6
Ic= 100|I AIE=0 Ic= 1 mA IB=0
IE= 100|I AIC=0 VCB= 600 VEB= 6 VIE=0 VIC=0
VCE= 10 V, IC= 250 A
I 1=-IB2=0.2A B
VCC=100V
CLASSIFICATION OF h FE(2)
Rank Range 9-15 15-20 20-25 25-30 30-35 35-40
TO-126 PACKAGE OUTLINE DIMENSIONS
D
A1
A
E
b1 L
e e1
L1 b C Dimensions In Millimeters Min 2.500 1.100 0.660 1.170 0.450 7.400 10.600 2.290TYP 4.480 15.300 2.100 3.900 3.000 4.680 15.700 2.300 4.100 3.200 0.176 0.602 0.083 0.154 0.118 Max 2.900 1.500 0.860 1.370 0.600 7.800 11.000 Min 0.098 0.043 0.026 0.046 0.018 0.291 0.417 0.090TYP 0.184 0.618 0.091 0.161 0.126
P
|O
Symbol A A1 b b1 c D E e e1 L L1 P |O
Dimensions In Inches Max 0.114 0.059 0.034 0.054 0.024 0.307 0.433

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